tsop18..si3v vishay semiconductors 1 (7) www.vishay.com document number 82134 rev. 2, 03may02 photo modules for pcm remote control systems available types for different carrier frequencies type fo type fo tsop1830si3v 30 khz tsop1833si3v 33.0 khz tsop1836si3v 36 khz tsop1837si3v 36.7 khz tsop1838si3v 38 khz tsop1840si3v 40.0 khz tsop1856si3v 56 khz description the tsop18..si3v series are miniaturized receivers for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. 16657 features photo detector and preamplifier in one package internal filter for pcm frequency ttl and cmos compatibility output active low improved shielding against electrical field disturbance suitable burst length 6 cycles/burst special features small size package supply voltage 36 volt enhanced immunity against all kinds of disturbance light no occurrence of disturbance pulses at the output short settling time after power on (<200 m s) block diagramm 16249 pin input agc control circuit band pass demodu- lator 80 k 2 3 1 v s out gnd
tsop18..si3v vishay semiconductors www.vishay.com 2 (7) rev. 2, 03may02 document number 82134 absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit supply voltage (pin 3) v s 0.3...6.0 v supply current (pin 3) i s 5 ma output voltage (pin 1) v o 0.3...6.0 v output current (pin 1) i o 5 ma junction temperature t j 100 c storage temperature range t stg 25...+85 c operating temperature range t amb 25...+85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 10 s, 1 mm from case t sd 260 c basic characteristics t amb = 25 c parameter test conditions symbol min. typ. max unit supply current (pin 3) v s = 3 v, e v = 0 i sd 0.5 0.75 1.0 ma y() v s = 3 v, e v = 40 klx, sunlight i sh 1.0 ma supply voltage (pin 3) v s 3.0 6.0 v transmission distance e v = 0, test signal see fig.6, ir diode tsal6200, i f = 300 ma d 35 m output voltage low (pin 1) i osl = 0.5 ma,e e = 0.7 mw/m 2 , f = f o v osl 250 mv irradiance (30 40 khz) pulse width tolerance: t i 4/f 10 k recomm. 330 *) *) only necessary to suppress power supply disturbances **) tolerated supply voltage range: 3 v < v s < 6 v gnd tsop18..si3v 3 1 2 +3v**)
tsop18..si3v vishay semiconductors 3 (7) www.vishay.com document number 82134 rev. 2, 03may02 suitable data format the circuit of the tsop18..si3v is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal (not suppressed) and disturbance signal (supressed) are carrier frequency, burst length and signal gap time (see diagram below). the data signal should fullfill the following condition: ? carrier frequency should be close to center frequency of the bandpass (e.g. 38 khz). ? burst length should be 6 cycles/burst or longer. ? after each burst a gap time of at least 9 cycles is neccessary. ? the data format should not make a continuous signal transmission. there must be a signal gap time (longer than 25 ms) at least each 150 ms (see figure a) some examples for suitable data format are: nec code (repetitive pulse), nec code (repetitive data), toshiba micom format, sharp code, rc5 code, recs80 code, r2000 code. when a disturbance signal is applied to the tsop18..si3v it can still receive the data signal. however the sensitivity is reduced to that level that no unexpected pulses will occure. some examples for such disturbance signals which are suppressed by the tsop18..si3v are: ? dc light (e.g. from tungsten bulb or sunlight), ? continuous signal at 38 khz or at any other frequency, ? signals from fluorescent lamps (see figure b). ? continuous ir signal (e.g. 1 ms burst, 2 ms pause) 0 20 40 60 80 100 120 140 time [ms] signal gap time figure a: data signal (output of ir receiver) with a signal gap time of 20ms 0 2 4 6 8 101214161820 time [ms] signal gap time figure b: disturbance signal from fluorescent lamp with signal gap time of 7ms
tsop18..si3v vishay semiconductors www.vishay.com 4 (7) rev. 2, 03may02 document number 82134 typical characteristics (t amb = 25 c, unless otherwise specified) 0.7 0.8 0.9 1.0 1.1 e / e rel. responsitivity e min f/f 0 relative frequency 1.3 94 9102 0.0 0.2 0.4 0.6 0.8 1.0 e 1.2 f = f 0 5% f ( 3db ) = f 0 /7 figure 1. frequency dependence of responsivity 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.10 1.00 10.00 100.00 e dc irradiance (w/m 2 ) 96 12214 e min e threshold irradiance (mw/m ) 2 correlation with ambient light sources (disturbanceeffect):10w/m2 1.4klx (stand.illum.a,t=2855k) 8.2klx (daylight,t=5900k) ambient, = 950 nm figure 2. sensitivity in bright ambient 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e threshold irradiance ( mw/m ) e min 2 f(e)=f 0 figure 3. sensitivity vs. electric field disturbances 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 1000.0 v srms ac voltage on dc supply voltage (mv) 96 12215 e min e threshold irradiance (mw/m ) 2 f = f o 10 khz 1 khz 100 hz figure 4. sensitivity vs. supply voltage disturbances 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v s supply voltage ( v ) 96 12216 e min e threshold irradiance (mw/m ) 2 sensitivity in dark ambient figure 5. sensitivity vs. supply voltage e e t v o v oh v ol t 600 s 600 s t rep =100 ms t on t off 16177 optical test signal output signal , ( see fig.7 ) t d *) *) t rep t d > 25 ms is recommended for optimal function figure 6. output function
tsop18..si3v vishay semiconductors 5 (7) www.vishay.com document number 82134 rev. 2, 03may02 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1.0 10.0 100.0 1000.0 10000.0 e e irradiance (mw/m 2 ) 16043 on off t ,t output pulse length (ms) t on t off figure 7. output pulse diagram 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30150 153045607590 t amb ambient temperature ( c ) 16044 i supply current ( ma ) s v s = 3 v figure 8. supply current vs. ambient temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30150 153045607590 t amb ambient temperature ( c ) 96 12221 e min e threshold irradiance (mw/m ) 2 sensitivity in dark ambient figure 9. sensitivity vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v s supply voltage ( v ) 96 12222 i supply current ( ma ) s supply current in dark ambient figure 10. supply current vs. supply voltage 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) relative spectral sensitivity rel wavelength ( nm ) 1150 94 8408 1.0 figure 11. relative spectral sensitivity vs. wavelength 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel relative transmission distance figure 12. directivity
tsop18..si3v vishay semiconductors www.vishay.com 6 (7) rev. 2, 03may02 document number 82134 dimensions in mm 16248
tsop18..si3v vishay semiconductors 7 (7) www.vishay.com document number 82134 rev. 2, 03may02 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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